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参数资料
| 型号： | 2SJ438 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 410K |
| 代理商： | 2SJ438 |
2SJ438
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2.5 A
—
0.24
0.28
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.16
0.19
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.0
—
S
Input capacitance
Ciss
—
630
—
Reverse transfer capacitance
Crss
—
95
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
290
—
pF
Rise time
tr
—
25
—
Turnon time
ton
—
45
—
Fall time
tf
—
55
—
Switching time
Turnoff time
toff
—
200
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
22
—
Gatesource charge
Qgs
—
16
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
—
6
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
80
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V dIDR / dt = 50 A / s
—
0.1
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
J438
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ438(AISIN,A,Q) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(AISIN,Q,M) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(CANO,A,Q) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(CANO,Q,M) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH - Rail/Tube |
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