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参数资料
| 型号： | 2SJ465 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | 2-5K1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 375K |
| 代理商： | 2SJ465 |
2SJ465
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 16 V, VGS = 0 V
—
100
A
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
16
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 200 A
0.5
—
1.1
V
VGS = 2.5 V, ID = 0.5 A
—
0.86
1.0
Drainsource ON resistance
RDS (ON)
VGS = 4 V, ID = 1 A
—
0.54
0.71
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1 A
0.8
1.7
—
S
Input capacitance
Ciss
—
270
—
Reverse transfer capacitance
Crss
—
25
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
115
—
pF
Rise time
tr
—
200
—
Turnon time
ton
—
250
—
Fall time
tf
—
200
—
Switching time
Turnoff time
toff
—
500
—
ns
Total gate charge
(Gatesource plus gatedrain)
Qg
—
5
—
Gatesource charge
Qgs
—
3.2
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 2 A
—
1.8
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
2
A
Pulse drain reverse current
(Note 1)
IDRP
—
6
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
130
—
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 50 A / s
—
0.13
—
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ465_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications |
| 2SJ466 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ466-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH30V35AZP |
| 2SJ467 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ468 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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