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参数资料
| 型号： | 2SJ479S |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 61K |
| 代理商： | 2SJ479S |
2SJ479(L), 2SJ479(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–30
A
Drain peak current
I
D(pulse)
Note1
–120
A
Body to drain diode reverse drain current
I
DR
–30
A
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ479STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ48 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ480 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
| 2SJ483 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ483TZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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