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参数资料
| 型号： | 2SJ479S |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 61K |
| 代理商： | 2SJ479S |
2SJ479(L), 2SJ479(S)
4
Main Characteristics
100
75
50
25
0
50
100
150
200
–500
–200
–100
–20
–50
–10
–2
–5
–1
–0.5
–0.1 –0.3
–1
–3
–10
–30
–100
1 ms
Ta = 25
°C
100
s
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
10
s
Channel
Dissipation
Pch
(W)
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
Maximun Safe Operation Area
Operation in
this area is
limited by R DS(on)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 2.5
°C/W, Tc = 25 °C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermao
Impedance
s
(t)
γ
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PDF描述 |
|---|---|
| 2SJ506S | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ656 | 18 A, 100 V, 0.104 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ546 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ552L | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ552S | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ479STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ48 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ480 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
| 2SJ483 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ483TZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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