- 您现在的位置：买卖IC网 > PDF目录222238 > 2SJ484 SMALL SIGNAL, FET PDF资料下载
参数资料
| 型号： | 2SJ484 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | MICROPAK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 42K |
| 代理商： | 2SJ484 |
2SJ484
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
—
–10
AV
DS = –30 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
resistance
R
DS(on)
—
0.18
0.23
I
D = –1A, VGS = –10V*
1
R
DS(on)
—
0.3
0.45
I
D = –1A, VGS = –4V*
1
Forward transfer admittance
|y
fs|
1.2
2.0
—
S
I
D = –1A, VDS = –10V*
1
Input capacitance
Ciss
—
230
—
pF
V
DS = –10V
Output capacitance
Coss
—
140
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
50
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = –1A, RL = 30
Rise time
t
r
—
30
—
ns
V
GS = –10V
Turn-off delay time
t
d(off)
—35—
ns
Fall time
t
f
—30—
ns
Body to drain diode forward
voltage
V
DF
—
–0.95
—
V
I
F = –2A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
60
—
ns
I
F = –2A, VGS = 0
diF/ dt = 50A/s
Notes: 1. Pulse test
2. Marking is “WY”.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ508 | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1023-01 | N CHANNEL SILICON POWER MOSFET |
| 2SK1024-01 | N CHANNEL SILICON POWER MOSFET |
| 2SK1212-01R | N CHANNEL SILICON POWER MOSFET |
| 2SK1233 | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
发布紧急采购，3分钟左右您将得到回复。