参数资料
型号: 2SJ492-ZJ
元件分类: JFETs
英文描述: 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: TO-263, 3 PIN
文件页数: 4/8页
文件大小: 156K
代理商: 2SJ492-ZJ
Data Sheet D11264EJ2V0DS00
4
2SJ492
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
°C/
W
10
0.001
0.01
0.1
1
100
1000
1 m10 m
100 m
1
10
100
1000
10
μμ
100
Single Pulse
Rth(ch-C) = 1.79
°C/W
Rth(ch-A) = 83.3
°C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
VDS =
10 V
Pulsed
0.1
1.0
1
10
100
10
100
0.1
Tch =
25°C
25
°C
75
°C
125
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
Ω
0
5
0.1
10
15
Pulsed
0.3
0.2
ID =
10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
Ω
0.10
1
0.15
10
100
Pulsed
0
VGS =
10 V
VGS =
4 V
0.05
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature -
°C
V
GS(off)
-
Gate
to
Source
Cutoff
Voltage
-
V
VDS =
10 V
ID =
1 mA
50
0
50
100
150
0
1.0
2.0
1.5
0.5
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