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参数资料
| 型号： | 2SJ492 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 4/4页 |
| 文件大小： | 72K |
| 代理商： | 2SJ492 |
Data Sheet D11264EJ1V0DS00
4
2SJ492
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C/
W
10
0.001
0.01
0.1
1
100
1000
1 m10 m
100 m
1
10
100
1000
10
100
Single Pulse
Rth(ch-c)= 1.79 C/W
Rth(ch-a)= 83.3 C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
VDS =
10 V
Pulsed
0.1
1.0
1
10
100
10
100
0.1
Tch =
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
5
0.1
10
15
Pulsed
0.3
0.2
ID =
10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0.10
1
0.15
10
100
Pulsed
0
VGS =
10 V
VGS =
4 V
0.05
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cutoff
Voltage
-
V
VDS =
10 V
ID =
1 mA
50
0
50
100
150
0
1.0
2.0
1.5
0.5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ492-AZ | 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ492-S-AZ | 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ496TZ-E | 5000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ503(TP) | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ503(TP-FA) | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ492(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ492-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ492-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ493 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ494 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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