参数资料
型号: 2SJ506L-E
元件分类: JFETs
英文描述: 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: DPAK-3
文件页数: 7/10页
文件大小: 102K
代理商: 2SJ506L-E
2SJ506(L), 2SJ506(S)
Rev.5.00 Sep 07, 2005 page 4 of 7
200
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
40
80
120
160
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –10 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
50
10
20
1
2
5
0.5
–0.1 –0.2 –0.5
–2
–1
–5
–20
–10
–50
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5 –1
–2
–5
–10 –20
100
50
10
20
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
200
500
1000
100
20
50
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
816
24
32
40
VDS
VGS
1000
200
500
100
20
50
5
10
–0.2 –0.5 –1 –2
–10 –20
–5
–50
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –5 V
–10 V
–25 V
VDD = –25 V
–10 V
–5 V
–10 V
VGS = –4 V
–5 A
–10 A
–2 A
–2 A, –5 A
VGS = –10 V, VDD = –10 V
PW = 10
s, duty ≤ 1 %
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