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参数资料
| 型号： | 2SJ506S |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 10/14页 |
| 文件大小： | 73K |
| 代理商： | 2SJ506S |
2SJ506(L), 2SJ506(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
—
–10
AV
DS = –30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state R
DS(on)
—
6585m
I
D = –5A, VGS = –10V
Note3
resistance
R
DS(on)
—
110
180
m
I
D = –5A, VGS = –4V
Note3
Forward transfer admittance
|y
fs|
1016—
S
I
D = –5A, VDS = –10V
Note3
Input capacitance
Ciss
—
660
—
pF
V
DS = –10V
Output capacitance
Coss
—
440
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
140
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
12
—
ns
I
D = –5A, RL = 2
Rise time
t
r
—
65
—
ns
V
GS = –10V
Turn-off delay time
t
d(off)
—85
—
ns
Fall time
t
f
—65
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.05
—
V
I
F = –10A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
65
—
ns
I
F = –10A, VGS = 0
diF/ dt = 50A/
s
Note:
3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
| 2SJ506STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| 2SJ507 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATOINS) |
| 2SJ507_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
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