- 您现在的位置：买卖IC网 > PDF目录155766 > 2SJ528(L) PDF资料下载
参数资料
| 型号： | 2SJ528(L) |
| 文件页数： | 6/12页 |
| 文件大小： | 60K |
| 代理商： | 2SJ528(L) |
2SJ527(L),2SJ527(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.3
0.4
I
D = –3A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.5
0.8
I
D = –3A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1.8
3
—
S
I
D = –3A, VDS = –10V
Note4
Input capacitance
Ciss
—
220
—
pF
V
DS = –10V
Output capacitance
Coss
—
110
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
35
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
V
GS = –10V, ID = –3A
Rise time
t
r
—
30
—
ns
R
L = 10
Turn-off delay time
t
d(off)
—45
—
ns
Fall time
t
f
—35
—
ns
Body–drain diode forward voltage
V
DF
—
–1.35
—
V
I
F = –5A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
55
—
ns
I
F = –5A, VGS = 0
diF/ dt = 50A/s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ528(S) | |
| 2SJ529(L) | |
| 2SJ529(S) | |
| 2SJ530(L) | |
| 2SJ530(S) | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ528-L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ528L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(3+Tab) DPAK(L)-(2) Box Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,7A,0.17ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(3+Tab) DPAK(L)-(2) Box |
| 2SJ528S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SJ528S-E | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) |
发布紧急采购，3分钟左右您将得到回复。