参数资料
型号: 2SJ528(S)
元件分类: JFETs
英文描述: 0.37 ohm, POWER, FET
封装: DPAK-3
文件页数: 6/12页
文件大小: 61K
代理商: 2SJ528(S)
2SJ528(L),2SJ528(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
0.17
0.22
I
D = –4A, VGS = –10V
Note4
resistance
R
DS(on)
0.24
0.37
I
D = –4A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
3.0
5.0
S
I
D = –4A, VDS = –10V
Note4
Input capacitance
Ciss
400
pF
V
DS = –10V
Output capacitance
Coss
220
pF
V
GS = 0
Reverse transfer capacitance
Crss
75
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
V
GS = –10V, ID = –4A
Rise time
t
r
40
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—75
ns
Fall time
t
f
—65
ns
Body–drain diode forward voltage
V
DF
–1.1
V
I
F = –7A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
65
ns
I
F = –7A, VGS = 0
diF/ dt = 50A/s
Note:
4. Pulse test
相关PDF资料
PDF描述
2SJ528(S) 0.37 ohm, POWER, FET
2SJ528L-E 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ529(L) 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ529(L) 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ529(S) 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
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