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参数资料
| 型号： | 2SJ528(S) |
| 元件分类： | JFETs |
| 英文描述： | 0.37 ohm, POWER, FET |
| 封装： | DPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 61K |
| 代理商： | 2SJ528(S) |
2SJ528(L),2SJ528(S)
5
–2.0
–1.6
–1.2
–0.8
–0.4
0
–4
–8
–12
–16
–20
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
–10 V
GS
V
= –4 V
1
0.5
0.05
0.02
0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–2 A
–1 A
0.2
0.1
–10 V
V
= –4 V
GS
Pulse Test
–0.1
–3
–100
0.1
30
100
10
1
0.3
–0.3
–1
–10
–30
3
–5 A
–2 A
–1 A
75 °C
25 °C
Ta = –25 °C
V
= –10 V
DS
Pulse Test
-1,–2 A
–5 A
I
= –5 A
D
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ528L-E | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(L) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(L) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(S) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529S | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ528S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SJ528S-E | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) |
| 2SJ528STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ529 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ529(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA |
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