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参数资料
| 型号： | 2SJ528L-E |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 6/11页 |
| 文件大小： | 108K |
| 代理商： | 2SJ528L-E |
2SJ528(L), 2SJ528(S)
Rev.3.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–7
A
Drain peak current
ID (pulse)
Note 1
–28
A
Body to drain diode reverse drain current
IDR
–7
A
Avalanche current
IAP
Note 3
–7
A
Avalanche energy
EAR
Note 3
4.2
mJ
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
—
0.17
0.22
ID = –4 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
0.24
0.37
ID = –4 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
3.0
5.0
—
S
ID = –4 A, VDS = –10 V
Note 4
Input capacitance
Ciss
—
400
—
pF
Output capacitance
Coss
—
220
—
pF
Reverse transfer capacitance
Crss
—
75
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
10
—
ns
Rise time
tr
—
40
—
ns
Turn-off delay time
td (off)
—
75
—
ns
Fall time
tf
—
65
—
ns
VGS = –10 V
ID = –4 A
RL = 7.5
Body to drain diode forward voltage
VDF
—
–1.1
—
V
IF = –7 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
65
—
ns
IF = –7 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ529(L) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(L) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(S) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529S | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529L | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ528S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SJ528S-E | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) |
| 2SJ528STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ529 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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