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参数资料
| 型号： | 2SJ529(S) |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 10/12页 |
| 文件大小： | 58K |
| 代理商： | 2SJ529(S) |
2SJ529(L),2SJ529(S)
7
–10
–8
–6
–4
–2
0
–0.4
–0.8
–1.2
–1.6
–2.0
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50W
Vin
–15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
V
= 0, 5 V
GS
–10 V
–5 V
Pulse Test
20
16
12
8
4
25
50
75
100
125
150
0
I
= –10 A
V
= –25 V
duty < 0.1 %
Rg > 50
AP
DD
W
Repetitive
Avalanche
Energy
E
(mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ529S | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529L | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529S-E | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ530L-E | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ530L | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ529S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK(S) Bulk |
| 2SJ529STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ529STR-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:0 |
| 2SJ530 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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