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参数资料
| 型号： | 2SJ529S-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 77K |
| 代理商： | 2SJ529S-E |
2SJ529(L),2SJ529(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–10
A
Drain peak current
I
D(pulse)
Note1
–40
A
Body-drain diode reverse drain current
I
DR
–10
A
Avalenche current
I
AP
Note3
–10
A
Avalenche energy
E
AR
Note3
8.5
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ530L-E | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ530L | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ530L | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ530S-E | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ529STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ529STR-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:0 |
| 2SJ530 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ530L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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