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参数资料
| 型号： | 2SJ530L |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 8/13页 |
| 文件大小： | 73K |
| 代理商： | 2SJ530L |
2SJ530(L),2SJ530(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–15
A
Drain peak current
I
D(pulse)
Note1
–60
A
Body-drain diode reverse drain current
I
DR
–15
A
Avalanche current
I
AP
Note3
–15
A
Avalanche energy
E
AR
Note3
19
mJ
Channel dissipation
Pch
Note2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ530L | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ530S-E | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ530L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,15A,80m ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) DPAK(L)-(2) Box |
| 2SJ530S | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ530S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SJ530STL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape |
| 2SJ531 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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