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参数资料
| 型号： | 2SJ539-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 101K |
| 代理商： | 2SJ539-E |
2SC1890, 2SC1890A
2
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SC1890
2SC1890A
Unit
Collector to base voltage
V
CBO
90
120
V
Collector to emitter voltage
V
CEO
90
120
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
50
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1890
2SC1890A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
90
—
120
—
V
I
C = 1 mA, RBE =
Collector cutoff current
I
CBO
—
0.5
—
A
V
CB = 75 V, IE = 0
—
0.5
A
V
CB = 100 V, IE = 0
DC current tarnsfer ratio h
FE*
1
250
—
1200
250
—
1200
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
0.75
—
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
0.5
—
0.5
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product f
T
—
200
—
200
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
1.6
—
1.6
—
pF
V
CB = 25 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
2
10
—
2
10
dB
V
CE = 6 V, IC = 50 A,
R
g = 50 k , f = 1 kHz
Note:
1. The 2SC1890/A is grouped by h
FE as follows.
DE
F
250 to 500
400 to 800
600 to 1200
See characteristic curves of 2SC1775 and 2SC1775A.
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相关代理商/技术参数 |
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|---|---|
| 2SJ540 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ540-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ541 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ541-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) TO-220AB Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| 2SJ542 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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