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参数资料
| 型号： | 2SJ539 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 67K |
| 代理商： | 2SJ539 |
2SJ539
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.16
0.21
I
D = –5A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.23
0.36
I
D = –5A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
3.5
5.5
—
S
I
D = –5A, VDS = –10V
Note4
Input capacitance
Ciss
—
400
—
pF
V
DS = –10V
Output capacitance
Coss
—
220
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
75
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
V
GS = –10V, ID = –5A
Rise time
t
r
—
45
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—65
—
ns
Fall time
t
f
—50
—
ns
Body–drain diode forward voltage
V
DF
—
–1.2
—
V
I
F = –10A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = –10A, VGS = 0
diF/ dt = 50A/
s
Note:
4. Pulse test
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PDF描述 |
|---|---|
| 2SJ539 | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ540 | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ545 | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ546 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ539-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box |
| 2SJ540 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ540-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ541 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ541-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) TO-220AB Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk |
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