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参数资料
| 型号： | 2SJ539 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 7/12页 |
| 文件大小： | 67K |
| 代理商： | 2SJ539 |
2SJ539
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–10
A
Drain peak current
I
D(pulse)
Note1
–40
A
Body-drain diode reverse drain current
I
DR
–10
A
Avalenche current
I
AP
Note3
–10
A
Avalenche energy
E
AR
Note3
8.5
mJ
Channel dissipation
Pch
Note2
40
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
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| 2SJ546 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ539-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box |
| 2SJ540 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ540-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ541 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ541-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) TO-220AB Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk |
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