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参数资料
| 型号： | 2SJ540 |
| 元件分类： | JFETs |
| 英文描述： | 0.23 ohm, POWER, FET, TO-220AB |
| 文件页数： | 4/10页 |
| 文件大小： | 51K |
| 代理商： | 2SJ540 |
2SJ540
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.11
0.15
I
D = –6A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.16
0.23
I
D = –6A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
58—
S
I
D = –6A, VDS = –10V
Note4
Input capacitance
Ciss
—
580
—
pF
V
DS = –10V
Output capacitance
Coss
—
300
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
85
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
V
GS = –10V, ID = –6A
Rise time
t
r
—
55
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—85
—
ns
Fall time
t
f
—60
—
ns
Body–drain diode forward voltage
V
DF
—
–1.2
—
V
I
F = –12A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
60
—
ns
I
F = –12A, VGS = 0
diF/ dt = 50A/s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ547 | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ549(S) | 0.23 ohm, POWER, FET |
| 2SJ549(S) | 0.23 ohm, POWER, FET |
| 2SJ549(L) | 0.23 ohm, POWER, FET |
| 2SJ549(L) | 0.23 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ540-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ541 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ541-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) TO-220AB Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| 2SJ542 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ542-E | 制造商:Renesas Electronics Corporation 功能描述: |
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