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参数资料
| 型号： | 2SJ540 |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 68K |
| 代理商： | 2SJ540 |
2SJ540
6
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
816
24
32
40
1000
100
300
30
3
10
1
–0.1 –0.2
–0.5 –1
–2
–5
–10
DS
V
GS
V
= –50 V
–25 V
–10 V
DD
D
I
= –10 A
V
= –10 V
–25 V
–50 V
DD
t f
r
t
d(off)
t
d(on)
t
DD
V
= –10 V, V
= –30 V
Pw = 5 s, duty < 1 %
GS
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
500
200
100
20
50
10
5
–0.1 –0.2
–1
–5
–10
0
–10
–20
–30
–40
–50
2000
1000
500
200
100
50
–0.5
–2
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
20
10
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ545 | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ546 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ550STL-E | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ550L-E | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ551S-E | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ540-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ541 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ541-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) TO-220AB Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| 2SJ542 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ542-E | 制造商:Renesas Electronics Corporation 功能描述: |
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