参数资料
型号: 2SJ543-E
元件分类: JFETs
英文描述: 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: SC-46, 3 PIN
文件页数: 2/8页
文件大小: 88K
代理商: 2SJ543-E
2SJ543
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–20
A
Drain peak current
ID (pulse)
Note 1
–80
A
Body to drain diode reverse drain current
IDR
–20
A
Avalanche current
IAP
Note 3
–20
A
Avalanche energy
EAR
Note 3
34
mJ
Channel dissipation
Pch
Note 2
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
0.042
0.055
ID = –10 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
0.065
0.095
ID = –10 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
10
16
S
ID = –10 A, VDS = –10 V
Note 4
Input capacitance
Ciss
1750
pF
Output capacitance
Coss
800
pF
Reverse transfer capacitance
Crss
180
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
16
ns
Rise time
tr
100
ns
Turn-off delay time
td (off)
230
ns
Fall time
tf
140
ns
VGS = –10 V
ID = –10 A
RL = 3
Body to drain diode forward voltage
VDF
–1.0
V
IF = –20 A, VGS = 0
Body to drain diode reverse recovery time
trr
100
ns
IF = –20 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
相关PDF资料
PDF描述
2SJ544-E 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ547 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ559 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ559-A 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ563 2 A, 30 V, 0.315 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SJ544 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ544-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220AB Box
2SJ545 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ545(E) 制造商:Renesas Electronics Corporation 功能描述:
2SJ545-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET