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参数资料
| 型号： | 2SJ546 |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 67K |
| 代理商： | 2SJ546 |
2SJ546
4
Main Characteristics
0.1
0.3
1
3
10
30
100
–20
–16
–12
–8
–4
0
–10 V
–2
–4
–6
–8
–10
–6 V
–20
–16
–12
–8
–4
0
Tc = 75°C
25°C
–25°C
–1
–2
–3
–4
–5
V
= –10 V
DS
Pulse Test
40
30
20
10
0
50
100
150
200
1000
300
100
30
10
3
1
0.3
0.1
Ta = 25 °C
1 ms
10 s
100
s
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25°C)
–3.5 V
V
= –2.5 V
GS
–4 V
–3 V
Pulse Test
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Operation in
this area is
limited by R DS(on)
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PDF描述 |
|---|---|
| 2SJ552L | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| 2SJ553S-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553L | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2N2891SMD | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ546(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ546-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ547 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ547-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ548 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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