- 您现在的位置：买卖IC网 > PDF目录48160 > 2SJ548-E 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SJ548-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-67, TO-220FM, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 89K |
| 代理商： | 2SJ548-E |
2SJ548
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–15
A
Drain peak current
ID (pulse)
Note 1
–60
A
Body to drain diode reverse drain current
IDR
–15
A
Avalanche current
IAP
Note 3
–15
A
Avalanche energy
EAR
Note 3
19
mJ
Channel dissipation
Pch
Note 2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.075
0.095
ID = –8 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
0.105
0.155
ID = –8 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
6.5
11
—
S
ID = –8 A, VDS = –10 V
Note 4
Input capacitance
Ciss
—
850
—
pF
Output capacitance
Coss
—
420
—
pF
Reverse transfer capacitance
Crss
—
110
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
12
—
ns
Rise time
tr
—
75
—
ns
Turn-off delay time
td (off)
—
125
—
ns
Fall time
tf
—
75
—
ns
VGS = –10 V
ID = –8 A
RL = 3.75
Body to drain diode forward voltage
VDF
—
–1.1
—
V
IF = –15 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
70
—
ns
IF = –15 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ557 | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ575 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ624-A | 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ649 | 20 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1065-4 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ549 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-262VAR |
| 2SJ549(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-263VAR |
| 2SJ549L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
发布紧急采购，3分钟左右您将得到回复。