参数资料
型号: 2SJ549STL-E
元件分类: JFETs
英文描述: 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, SC-83, LDPAK-3
文件页数: 3/3页
文件大小: 97K
代理商: 2SJ549STL-E
2SJ549(L), 2SJ549(S)
Rev.4.00 Jun 05, 2006 page 3 of 8
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0
–2
–4–6–8
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = 75°C
80
0
20
40
60
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
–3.5 V
–2.5 V
–3 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–10
–30
–3
–0.3
–1
–0.1
–0.3
–1
–3
–10
–30
–100
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
相关PDF资料
PDF描述
2SJ550(S) 0.155 ohm, POWER, FET
2SJ550(L) 0.155 ohm, POWER, FET
2SJ550L 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ550S-E 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ550L 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SJ55 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 8A I(D) | TO-3
2SJ550 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ550(S)(TL-E) 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) LDPAK(S)-(1) T/R
2SJ550L 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET