参数资料
型号: 2SJ550S-E
元件分类: JFETs
英文描述: 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: DPAK-3
文件页数: 10/14页
文件大小: 79K
代理商: 2SJ550S-E
2SJ550(L),2SJ550(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
0.075
0.095
I
D = –8A, VGS = –10V
Note4
resistance
R
DS(on)
0.105
0.155
I
D = –8A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
6.5
11
S
I
D = –8A, VDS = –10V
Note4
Input capacitance
Ciss
850
pF
V
DS = –10V
Output capacitance
Coss
420
pF
V
GS = 0
Reverse transfer capacitance
Crss
110
pF
f = 1MHz
Turn-on delay time
t
d(on)
12
ns
V
GS = –10V, ID = –8A
Rise time
t
r
75
ns
R
L = 3.75
Turn-off delay time
t
d(off)
125
ns
Fall time
t
f
—75
ns
Body–drain diode forward voltage
V
DF
–1.1
V
I
F = –15A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
70
ns
I
F = –15A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
相关PDF资料
PDF描述
2SJ550L 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ550S 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ550S-E 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ551(L) 0.11 ohm, POWER, FET
2SJ551(L) 0.11 ohm, POWER, FET
相关代理商/技术参数
参数描述
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