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参数资料
| 型号： | 2SJ551(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.11 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 62K |
| 代理商： | 2SJ551(L) |
2SJ551(L),2SJ551(S)
5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
–4
–8
–12
–16
–20
–1
–5
–20
–100
–2
–10
–50
1
0.2
0.01
–40
0
40
80
120
160
0
0.05
0.02
0.1
0.5
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
I
= –20 A
D
–10 A
–5 A
V
= –4 V
GS
–10 V
0.30
0.25
0.20
0.15
0.10
0.05
–5, –10, –20 A
V
= –4 V
GS
–10 V
I
= –20 A
D
–5, –10 A
25 °C
Tc = –25 °C
75 °C
DS
V
= –10 V
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain Current
I
(A)
D
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ551(L) | 0.11 ohm, POWER, FET |
| 2SJ551(L) | 0.11 ohm, POWER, FET |
| 2SJ551(S) | 0.11 ohm, POWER, FET |
| 2SJ554-E | 45 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ554-E | 45 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ551-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box |
| 2SJ551L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box Tray |
| 2SJ551S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ551STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ552 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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