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参数资料
| 型号： | 2SJ554-E |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 90K |
| 代理商： | 2SJ554-E |
2SJ554
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–45
A
Drain peak current
ID (pulse)
Note 1
–180
A
Body to drain diode reverse drain current
IDR
–45
A
Avalanche current
IAP
Note 3
–45
A
Avalanche energy
EAR
Note 3
173
mJ
Channel dissipation
Pch
Note 2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.028
0.037
ID = –25 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
0.038
0.055
ID = –25 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
18
30
—
S
ID = –25 A, VDS = –10 V
Note 4
Input capacitance
Ciss
—
2500
—
pF
Output capacitance
Coss
—
1300
—
pF
Reverse transfer capacitance
Crss
—
300
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
25
—
ns
Rise time
tr
—
160
—
ns
Turn-off delay time
td (off)
—
350
—
ns
Fall time
tf
—
240
—
ns
VGS = –10 V
ID = –25 A
RL = 1.2
Body to drain diode forward voltage
VDF
—
–1.1
—
V
IF = –45 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
100
—
ns
IF = –45 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ555 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ555(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P |
| 2SJ555-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,60A,17m ohm,TO-3P |
| 2SJ557 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
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