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参数资料
| 型号： | 2SJ567(2-7J1B) |
| 元件分类： | JFETs |
| 英文描述： | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, SC-64, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 177K |
| 代理商： | 2SJ567(2-7J1B) |
2SJ567
2009-07-13
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
Enhancement model: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.5
Drain current
Pulse
(Note 1)
IDP
10
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25.2 mH, IAR = 2.5 A
RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.6 MAX.
2.3
6.8 MAX.
0.95 MAX.
0.6
± 0.15
5.
5
±
0.2
1.
7
±
0.2
12
.0
MIN.
2.5
M
A
X
.
1.1
±
0.
2
5.2
± 0.2
1
2
3
2.3
3
2
1
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
1.1
± 0.2
0.1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.3
1.
2
MA
X
.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.
2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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