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参数资料
| 型号： | 2SJ567 |
| 元件分类： | JFETs |
| 英文描述： | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 2-7J1B, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 176K |
| 代理商： | 2SJ567 |
2SJ567
2010-02-05
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
Enhancement model: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.5
Drain current
Pulse
(Note 1)
IDP
10
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25.2 mH, IAR = 2.5 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1
± 0.2
0.1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.3
1.
2
MA
X
.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.
2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ567(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 200V 2.5A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-ch 200V 2.5A 20W New PW-Mold |
| 2SJ567_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Applications |
| 2SJ567_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV) |
| 2SJ569LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ56H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
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