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参数资料
| 型号： | 2SJ600-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 114K |
| 代理商： | 2SJ600-Z |
2SJ439
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 16 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
16
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.5
—
1.1
V
VGS = 2.5 V, ID = 2.5 A
—
0.18
0.28
Drainsource ON-resistance
RDS (ON)
VGS = 4 V, ID = 2.5 A
—
0.14
0.2
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3.0
6.0
—
S
Input capacitance
Ciss
—
1050
—
Reverse transfer capacitance
Crss
—
120
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
460
—
pF
Rise time
tr
—
80
—
Turnon time
ton
—
100
—
Fall time
tf
—
250
—
Switching time
Turnoff time
toff
—
550
—
ns
Total gate charge
(Gatesource plus gatedrain)
Qg
—
24
—
Gatesource charge
Qgs
—
16
—
Gatedrain (“Miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 5 A
—
8
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
120
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,dlDR / dt = 50 A / s
—
0.12
—
C
Marking
J439
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ601-AZ | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ601-Z-AZ | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ602-Z | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ602-Z-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ602-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ600-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -25A 50m@10V TO252 Bulk |
| 2SJ600-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO251 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO251 Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO251 Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,36A,25m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 36A 3-Pin(3+Tab) TO-251 |
| 2SJ601-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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