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参数资料
| 型号： | 2SJ600 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 157K |
| 代理商： | 2SJ600 |
Data Sheet D14645EJ3V0DS
4
2SJ600
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
–1
–2
–3
–4
–5
VDS = –10 V
–10
–1
–0.1
–100
TA =
40C
25C
75C
125C
–0.01
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
–2
–3
–4
–100
–80
–60
–40
–20
0
–1
Pulsed
VGS = –10 V
–5
–4.5 V
–4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
–0.01
–0.1
–1
10
100
–10
–100
0.1
1
Pulsed
VDS = –10 V
0.01
TA = 125C
75C
25C
40C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
–5
–10
–15
–20
Pulsed
100
80
60
40
20
0
ID = –5 A
ID = –25 A
ID = –13 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
–1
–0.1
–10
–100
Pulsed
VGS = –4.0 V
–4.5 V
–10 V
0
20
40
60
80
100
120
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS = –10 V
ID = –1 mA
–1.0
–2.0
–3.0
–50
0
50
100
0
150
–4.0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ600-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,25A,41m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 25A 3-Pin(3+Tab) TO-251 |
| 2SJ600-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ600-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -25A 50m@10V TO252 Bulk |
| 2SJ600-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601 | 制造商:Renesas Electronics Corporation 功能描述: |
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