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参数资料
| 型号： | 2SJ604-S |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | MP-25 FIN CUT, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 80K |
| 代理商： | 2SJ604-S |
Data Sheet D14649EJ3V0DS
7
2SJ604
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)
Note
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ604 | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ604-ZJ-AZ | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ604-ZJ-AZ | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ604-AZ | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ604 | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ604-Z | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ604-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220SMD Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 45A 3-Pin(2+Tab) TO-220 SMD |
| 2SJ604-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ604-ZJ-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ605 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
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