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参数资料
| 型号： | 2SJ604 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 80K |
| 代理商： | 2SJ604 |
Data Sheet D14649EJ3V0DS
2
2SJ604
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
m 20 V, VDS = 0 V
m 10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS =
10 V, ID = 23 A
20
41
S
Drain to Source On-state Resistance
RDS(on)1
VGS =
10 V, ID = 23 A
23
30
m
RDS(on)2
VGS =
4.0 V, ID = 23 A
30
43
m
Input Capacitance
Ciss
VDS =
10 V
3300
pF
Output Capacitance
Coss
VGS = 0 V
580
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
230
pF
Turn-on Delay Time
td(on)
VDD =
30 V, ID = 23 A
12
ns
Rise Time
tr
VGS =
10 V
11
ns
Turn-off Delay Time
td(off)
RG = 0
77
ns
Fall Time
tf
52
ns
Total Gate Charge
QG
VDD=
48 V
63
nC
Gate to Source Charge
QGS
VGS =
10 V
11
nC
Gate to Drain Charge
QGD
ID =
45 A
16
nC
Body Diode Forward Voltage
VF(S-D)
IF = 45 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 45 A, VGS = 0 V
51
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
105
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
)
10%
90%
10%
0
VDS (
)
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ604-ZJ-AZ | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ604-ZJ-AZ | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ604-AZ | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ604 | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ604-S | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ604-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220AB Bulk 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220AB Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,45A,23m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 45A 3-Pin(3+Tab) TO-220AB |
| 2SJ604-S | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ604-Z | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ604-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220SMD Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 45A 3-Pin(2+Tab) TO-220 SMD |
| 2SJ604-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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