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参数资料
| 型号： | 2SJ605-AZ |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 84K |
| 代理商： | 2SJ605-AZ |
2000
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
!
! shows major revised points.
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 20 m
MAX. (VGS = –10 V, ID = –33 A)
RDS(on)2 = 31 m
MAX. (VGS = –4.0 V, ID = –33 A)
Low input capacitance
Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m 20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m 65
A
Drain Current (pulse)
Note1
ID(pulse)
m 200
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
–45
A
Single Avalanche Energy
Note2
EAS
203
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25
, VGS = –20
→0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ605
TO-220AB
2SJ605-S
TO-262
2SJ605-ZJ
TO-263
2SJ605-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
!
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ605-ZJ-AZ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ606-ZJ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ606 | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ606-Z | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ606-ZJ-AZ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ605-S | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-Z | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 65A 3-Pin(2+Tab) TO-220 SMD |
| 2SJ605-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-ZJ-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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