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参数资料
| 型号： | 2SJ605-ZJ-AZ |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZJ, TO-263, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 214K |
| 代理商： | 2SJ605-ZJ-AZ |
Data Sheet D14650EJ2V0DS
2
2SJ605
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS =
m 20 V, VDS = 0 V
m 10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
| yfs |VDS = –10 V, ID = –33 A30
59
S
Drain to Source On-state Resistance
RDS(on)1
VGS = –10 V, ID = –33 A17
20
m
RDS(on)2
VGS = –4.0 V, ID = –33 A22
31
m
Input Capacitance
Ciss
VDS = –10 V
4600
pF
Output Capacitance
Coss
VGS = 0 V
820
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
330
pF
Turn-on Delay Time
td(on)
VDD = –30 V, ID = –33 A15
ns
Rise Time
tr
VGS = –10 V14
ns
Turn-off Delay Time
td(off)
RG = 0
100
ns
Fall Time
tf
58
ns
Total Gate Charge
QG
VDD= –48 V87
nC
Gate to Source Charge
QGS
VGS = –10 V15
nC
Gate to Drain Charge
QGD
ID = –65 A22
nC
Body Diode Forward Voltage
VF(S-D)
IF = 65 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 65 A, VGS = 0 V53
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
110
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG
L
VDD
VGS = –20 V
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
)
10%
90%
10%
0
VDS (
)
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
!
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ605-ZJ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ605-Z-AZ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ605-S-AZ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ607-S-AZ | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ607-S | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ605-ZJ-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ606 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SJ606-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,83A,12m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220AB |
| 2SJ606-S | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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