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参数资料
| 型号： | 2SJ605 |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 214K |
| 代理商： | 2SJ605 |
Data Sheet D14650EJ2V0DS
3
2SJ605
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
–1
–0.1
–10
–100
–1000
–1
–10
–100
TC = 25C
Single Pulse
PW
=
10
s
100
s
1 ms
10
ms
DC
Power
Dissipation
Limited
R
DS(on)
Limited
ID(DC)
ID(pulse)
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(ch-C) = 1.25C/W
Rth(ch-A) = 83.3C/W
!
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ605-ZJ-AZ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ605-ZJ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ605-Z-AZ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ605-S-AZ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ607-S-AZ | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ605-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 65A 3-Pin(3+Tab) TO-220AB |
| 2SJ605-S | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-Z | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 65A 3-Pin(2+Tab) TO-220 SMD |
| 2SJ605-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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