参数资料
型号: 2SJ607-S-AZ
元件分类: JFETs
英文描述: 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: MP-25 FIN CUT, 3 PIN
文件页数: 2/8页
文件大小: 78K
代理商: 2SJ607-S-AZ
Data Sheet D14655EJ3V0DS
2
2SJ607
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
m 20 V, VDS = 0 V
m 10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS =
10 V, ID = 42 A
45
90
S
Drain to Source On-state Resistance
RDS(on)1
VGS =
10 V, ID = 42 A
9.1
11
m
RDS(on)2
VGS =
4.0 V, ID = 42 A
11
16
m
Input Capacitance
Ciss
VDS =
10 V
7500
pF
Output Capacitance
Coss
VGS = 0 V
1800
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
430
pF
Turn-on Delay Time
td(on)
VDD =
30 V, ID = 42 A
23
ns
Rise Time
tr
VGS =
10 V
16
ns
Turn-off Delay Time
td(off)
RG = 0
340
ns
Fall Time
tf
160
ns
Total Gate Charge
QG
VDD=
48 V
188
nC
Gate to Source Charge
QGS
VGS =
10 V
30
nC
Gate to Drain Charge
QGD
ID =
83 A
48
nC
Body Diode Forward Voltage
VF(S-D)
IF = 83 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
64
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
150
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
)
10%
90%
10%
0
VDS (
)
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
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