参数资料
型号: 2SJ621-A
元件分类: 小信号晶体管
英文描述: 3500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: PLASTIC, SC-96, 3 PIN
文件页数: 2/8页
文件大小: 72K
代理商: 2SJ621-A
Data Sheet D15634EJ1V0DS
2
2SJ621
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –12 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS =
m8.0 V, VDS = 0 V
m10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1.0 mA
0.45
1.5
V
Forward Transfer Admittance
| yfs |VDS = –10 V, ID = –3.5 A
4.0
S
Drain to Source On-state Resistance
RDS(on)1
VGS = –4.5 V, ID = –2.0 A
35
44
m
RDS(on)2
VGS = –3.0 V, ID = –2.0 A
42
56
m
RDS(on)3
VGS = –2.5 V, ID = –2.0 A
46
62
m
RDS(on)4
VGS = –1.8 V, ID = –1.5 A
63
105
m
Input Capacitance
Ciss
VDS = –10 V
630
pF
Output Capacitance
Coss
VGS = 0 V
170
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
100
pF
Turn-on Delay Time
td(on)
VDD = –6.0 V, ID = –2.0 A
20
ns
Rise Time
tr
VGS = –4.0 V
70
ns
Turn-off Delay Time
td(off)
RG = 10
320
ns
Fall Time
tf
200
ns
Total Gate Charge
QG
VDD = –10 V
6.2
nC
Gate to Source Charge
QGS
VGS = –4.0 V
1.0
nC
Gate to Drain Charge
QGD
ID = –3.5 A
2.0
nC
Body Diode Forward Voltage
VF(S-D)
IF = 3.5 A, VGS = 0 V
0.84
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS ()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
Wave Form
VDS
Wave Form
VGS()
VDS()
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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