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参数资料
| 型号： | 2SJ621-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC, SC-96, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 201K |
| 代理商： | 2SJ621-A |
Data Sheet D15634EJ1V0DS
4
2SJ621
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drai
n
Current
-
A
Pu ls e d
4.5 V
1.8 V
2.5 V
3.0 V
ID
-
Drai
n
Current
-
A
V DS =
10 V
Pu ls e d
T A =
25°C
25 °C
75 °C
12 5°C
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(o
ff)
-
Gat
e
Cut
-of
fV
o
lt
age
-
V
-5 0
0
50
10 0
15 0
V SD =
10 V
ID =
1 m A
|y
fs
|
-
Forw
ard
Trans
fe
rA
d
m
it
tanc
e
-
S
0.1
1
10
10 0
T A =
25 °C
25
°C
75
°C
12 5
°C
V DS =
10 V
Puls e d
Tch - Channel Temperature -
°CID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
20
40
60
80
100
-5 0
0
50
100
1 50
Pu ls ed
V GS =
1.8 V
2.5 V
4.5 V
3.0 V
0
20
40
60
80
10 0
Puls ed
ID =
2.0 A
R
DS
(on)
-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
m
Tch - Channel Temperature -
°C
R
DS
(on)
-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
m
VGS - Gate to Source Voltage - V
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.2
1.6
2
0.01
0.1
1
10
0
2
4
6
8
12
10
8
6
4
2
0
100
10
1
0.1
0.01
0.001
0.0001
1.2
0.7
0.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ621-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ621-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 12V 3.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics 功能描述:Pch -12V }3.5A 44m SC96 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 3.5A 3-Pin Thin-Type Mini-Mold T/R |
| 2SJ624 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ624(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ624-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 4.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape |
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