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参数资料
| 型号： | 2SJ653 |
| 元件分类： | JFETs |
| 英文描述： | 37 A, 60 V, 0.037 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220ML, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 33K |
| 代理商： | 2SJ653 |
Power MOSFET for 60V/100V
No.7623-1/4
The Power MOSFET new series products are large-signal, medium-voltage Power MOSFETs optimized for DC/DC
converters and motor drives with a DC input of 12V to 48V. Taking the form of a full-mold TO-220 (TO-220ML), the
new MOSFET adopts a trench structure to achieve an increase in performance of 50% or more compared with existing
products.
Features
Avalanche resistance guaranteed.
Lower ON-resistance by adopting trench structure.
4V low-voltage drive.
Examples of application sets and sample application circuits
DC/DC converters for amusement use, electric bicycles, fan motors, general-purpose motor drives, etc.
< Sample motor drive circuits >
< Sample DC/DC converter circuits >
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7623
82903 TS IM
Large-signal Power MOSFET
for 60V/100V Motor Drivers
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Q1
Q2
Q1
Q2
Q3
Q4
Q1
Q2
Q3
Q4
Q5
Q6
M
Single-phase motor
(Half-Bridge)
Single-phase motor
(H- Bridge)
3-phase motor
IN
OUT
+
IN
OUT
+
IN
OUT
+
Down converter
Up converter
Off-line converter
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1420 | 25 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1904 | 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ650 | 12 A, 60 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ348 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ591LS | 28 A, 60 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ654 | 制造商:SANYO 功能描述:Pch -100V 240A 315m@10V TO220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 100V 8A TO220ML 制造商:Sanyo 功能描述:Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220ML |
| 2SJ655 | 功能描述:MOSFET P-CH 100V 12A TO-220ML RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ655-MG5 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SJ656 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ657 | 制造商:SANYO 功能描述:Pch -100V 39A 52m@10V TO220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 100V 25A TO220ML |
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