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参数资料
| 型号： | 2SJ656 |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 100 V, 0.104 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 30K |
| 代理商： | 2SJ656 |
2SJ656
No.7684-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--18
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--72
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--100V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--9A
14
20
S
Marking : J656
Continued on next page.
P-Channl Silicon MOSFET
Ordering number : ENN7684
2SJ656
41504QA TS IM TA-100801
General-Purpose Switching Device
Package Dimensions
unit : mm
2063A
[2SJ656]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.4
4.5
2.8
0.7
2.55
2.4
1
23
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ676 | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ681 | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK1019 | 35 A, 450 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL |
| 2SK1030 | 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ657 | 制造商:SANYO 功能描述:Pch -100V 39A 52m@10V TO220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 100V 25A TO220ML |
| 2SJ658 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Speed Switching Applications |
| 2SJ659 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ660 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ661 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
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