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参数资料
| 型号： | 2SJ667 |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 100 V, 0.074 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 39K |
| 代理商： | 2SJ667 |
2SJ667
No.8248-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--42
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--168
A
Allowable Power Dissipation
PD
2.5
W
Tc=25
°C
100
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
58
mJ
Avalanche Current *2
IAV
--42
A
Note : *1 VDD=30V, L=50H, IAV=--42A
*2 L
≤50H, Single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--100V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--21A
22
37
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--21A, VGS=--10V
42
56
m
RDS(on)2
ID=--21A, VGS=--4V
52
74
m
Marking : J667
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8248
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
31005QA TS IM TB-00001248
2SJ667
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ667 | 42 A, 100 V, 0.074 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ74 | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SJ74-BL | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SJ76-E | 0.5 A, 140 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1033 | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ668 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications |
| 2SJ668(Q) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin (2+Tab) PW-Mold Cut Tape |
| 2SJ668(TE16L,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-Channel 60V 5A Logic PW-Mold |
| 2SJ668(TE16L1,NQ) | 功能描述:MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ668(TE16L1NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P CH 5A 60V DPAK |
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