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参数资料
| 型号： | 2SJ668(2-7J1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, SC-64, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 188K |
| 代理商： | 2SJ668(2-7J1B) |
2SJ668
2009-07-13
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (UMOSIII)
2SJ668
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 k)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse(Note 1)
IDP
20
A
Drain power dissipation (Tc=25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.6 MAX.
2.3
6.8 MAX.
0.95 MAX.
0.6
± 0.15
5.5
±
0.
2
1.7
±
0.2
12
.0
M
IN.
2.
5
MA
X.
1.1
±
0.
2
5.2
± 0.2
1
2
3
2.3
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
3
2
1
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
1.1
± 0.2
0.1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.3
1.
2
MA
X
.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.
2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.35 g (typ.)
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