参数资料
型号: 2SJ687-ZK-E2-AY
元件分类: 小信号晶体管
英文描述: 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: LEAD FREE, MP-3ZK, TO-252, 3 PIN
文件页数: 1/8页
文件大小: 161K
代理商: 2SJ687-ZK-E2-AY
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MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
Low on-state resistance
RDS(on)1 = 7.0 m
Ω MAX. (VGS = 4.5 V, ID = 10 A)
RDS(on)2 = 9.0 m
Ω MAX. (VGS = 3.0 V, ID = 10 A)
RDS(on)3 = 20 m
Ω MAX. (VGS = 2.5 V, ID = 10 A)
2.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SJ687-ZK-E1-AY
Note
2SJ687-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
0.27 g TYP.
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
m20
A
Drain Current (pulse)
Note1
ID(pulse)
m60
A
Total Power Dissipation (TC = 25
°C)
PT1
36
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
20
A
Single Avalanche Energy
Note2
EAS
40
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 10 V, RG = 25 Ω, VGS = 12 → 0 V
(TO-252)
相关PDF资料
PDF描述
2SJ687-ZK-E1-AY 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SJ687-ZK-E2-AY 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK0601G 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK0620 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2SK0662GQ 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
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