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参数资料
| 型号： | 2SJ76-E |
| 元件分类： | JFETs |
| 英文描述： | 0.5 A, 140 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 78K |
| 代理商： | 2SJ76-E |
2SJ76, 2SJ77, 2SJ78, 2SJ79
Rev.2.00 Sep 07, 2005 page 3 of 5
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(mA)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(mA)
Typical Transfer Characteristics
–50
0
–10
–20
–30
–40
0
–20
–40
–60
–80
–100
–500
0
–100
–200
–300
–400
0
–1–2–3–4–5
75°C
Tc = 25°C
25°C
Tc = –25°C
60
0
20
40
050
100
150
VDS = –20 V
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
VGS = –0.1 V
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(mA)
Typical Transfer Characteristics
–100
0
–20
–40
–60
–80
0
–0.4
–0.8
–1.2
–1.6
–2.0
Tc = –25°C
VDS = –20 V
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(mA)
Typical Output Characteristics
–500
0
–100
–200
–300
–400
0
–4
–8
–12
–16
–20
Tc = 25°C
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
VGS = –0.5 V
25°C
75°C
Forward
Transfer
Admittance
|y
fs
|
(mS)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (mA)
200
100
20
50
10
2
5
–2
–5
–10
–20
–50 –100 –200
Tc = 25°C
VDS = –20 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ78-E | 0.5 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ77-E | 0.5 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ76 | 0.5 A, 140 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ78 | 0.5 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ77 | 0.5 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ77 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 160V 0.5A 3PIN TO-220AB - Rail/Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 160V 0.5A 3-Pin(3+Tab) TO-220AB Box 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 160V 0.5A 3-Pin(3+Tab) TO-220AB Box Bulk |
| 2SJ77-E | 功能描述:MOSFET P-CH 160V 0.5A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ77K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 160V V(BR)DSS | 500MA I(D) | TO-220 |
| 2SJ78 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ78(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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