参数资料
型号: 2SJ77
元件分类: JFETs
英文描述: 0.5 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 3/6页
文件大小: 32K
代理商: 2SJ77
2SJ76, 2SJ77, 2SJ78, 2SJ79
3
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
–500
–8
–20
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–400
–100
–4
–12
–16
0
–200
–300
Drain
Current
I
D
(mA)
TC = 25°C
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
VGS = –0.5 V
–50
–40
–100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–40
–10
–20
–60
–80
0
–20
–30
Drain
Current
I
D
(mA)
TC = 25°C
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
VGS = –0.1 V
–500
–2
–5
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(mA)
Typical Transfer Characteristics
–400
–100
–1
–3
–4
0
–200
–300
T C
=
–25°C25
75
VDS = –20 V
相关PDF资料
PDF描述
2SJ77 0.5 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ76 0.5 A, 140 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1014-01 12 A, 500 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
2SK1017 20 A, 450 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1052 0.5 A, 450 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SJ77-E 功能描述:MOSFET P-CH 160V 0.5A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SJ77K 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 160V V(BR)DSS | 500MA I(D) | TO-220
2SJ78 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ78(E) 制造商:Renesas Electronics Corporation 功能描述:
2SJ78-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET