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参数资料
| 型号： | 2SK0301S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | SC-43, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 196K |
| 代理商： | 2SK0301S |
247
Silicon Junction FETs (Small Signal)
unit: mm
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noies, high gain
G High gate to drain voltage V
GDO
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
VDSX
VGDO
VGSO
ID
IG
PD
Tj
Tstg
Ratings
55
±30
10
250
125
55 to +125
Unit
V
mA
mW
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
IDSS*
IGSS
VGDC
VGSC
gm
Ciss
Crss
NF
Conditions
VDS = 10V, VGS = 0
VGS =
30V, V
DS = 0
IG = 100A, VDS = 0
VDS = 10V, ID = 10
A
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, Rg = 100k
f = 100Hz
min
1
55
2.5
max
20
10
5
Unit
mA
nA
V
mS
pF
dB
* IDSS rank classification
typ
80
7.5
6.5
1.9
0.5
Runk
IDSS (mA)
P
1 to 3
Q
2 to 6.5
R
5 to 12
1: Drain
2: Gate
3: Source
JEDEC: TO-92
EIAJ: SC-43
TO-92-A1 Package
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±0.2
12.9
±0.5
2.3
±0
.2
0.7
±0.2
S
10 to 20
Note) The part number in the parenthesis shows conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK0301P | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK301S | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK302 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236 |
| 2SK302-Y | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236 |
| 2SK3051(2-10S1B) | 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
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参数描述 |
|---|---|
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| 2SK060100L | 功能描述:MOSFET N-CH 80V 500MA MINI-PWR RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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