参数资料
型号: 2SK1061
元件分类: 小信号晶体管
英文描述: 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: 2-4E1E, 3 PIN
文件页数: 1/5页
文件大小: 279K
代理商: 2SK1061
2SK1061
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
Excellent switching times: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
Low on resistance: RDS (ON) = 0.6 (typ.)
Enhancement-mode
Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
200
Drain current
Pulse
IDP
800
mA
Drain power dissipation (Ta
= 25°C)
PD
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1E
Weight: 0.13 g (typ.)
相关PDF资料
PDF描述
2SK1062TE85R 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
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2SK1070-E 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
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相关代理商/技术参数
参数描述
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