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参数资料
| 型号： | 2SK1062 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | 2-3F1F, S-MINI, SC-59, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 164K |
| 代理商： | 2SK1062 |
2SK1062
2003-03-27
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0
±100
nA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0
10
mA
Drain-source breakdown voltage
V (BR) DSS
ID = 1 mA, VGS = 0
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2
3.5
V
Forward transfer admittance
Yfs
VDS = 10 V, ID = 50 mA
100
mS
Drain-source ON resistance
RDS (ON)
ID = 50 mA, VGS = 10 V
0.6
1.0
W
Drain-source ON voltage
VDS (ON)
ID = 50 mA, VGS = 10 V
30
50
mV
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
55
65
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
13
18
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
40
50
pF
Rise time
tr
8
Turn-on time
ton
14
Fall time
tf
35
Switching time
Turn-off Time
toff
VIN: tr, tf < 5 ns
D.U <= 1% (Zout = 50 W)
75
ns
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1062(F) | 制造商:Toshiba 功能描述:Nch 60V 200mA S-MINI(1.5~2.9) Bulk |
| 2SK1062(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 60V 0.2A 3-Pin SMini T/R 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| 2SK1062_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type High Speed Switching Applications |
| 2SK1062-TE85L | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1062TE85LF | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
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